DMC2020USD-13 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SO-8
Logic-Level
DIODES
Vds Max
20V
Id Max
8.5A;6.8A
Rds(on)
13mΩ@4.5V;20mΩ@4.5V
Vgs(th)
1.1V;700mV
Quick Reference
The DMC2020USD-13 is a Dual N/P-Channel in a SO-8 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 8.5A;6.8A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SO-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 8.5A;6.8A | Max current handling |
| Power Dissipation (Pd) | 1.25W;1.8W | Max thermal limit |
| On-Resistance (Rds(on)) | 13mΩ@4.5V;20mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.1V;700mV | Voltage required to turn on |
| Gate Charge (Qg) | 11.6nC@4.5V;15.4nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 1.149nF;1.61nF | Internal gate capacitance |
| Output Capacitance (Coss) | 157pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||