DMC1030UFDBQ-13 MOSFET Array Datasheet & Equivalents

Dual N/P-Channel UDFN2020-6 Logic-Level DIODES
Vds Max
12V
Id Max
5.1A
Rds(on)
215mΩ@1.5V
Vgs(th)
1V

Quick Reference

The DMC1030UFDBQ-13 is a Dual N/P-Channel in a UDFN2020-6 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 12V and a continuous drain current of 5.1A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageUDFN2020-6Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)12VMax breakdown voltage
Continuous Drain Current (Id)5.1AMax current handling
Power Dissipation (Pd)1.89WMax thermal limit
On-Resistance (Rds(on))215mΩ@1.5VResistance when turned fully on
Gate Threshold (Vgs(th))1VVoltage required to turn on
Gate Charge (Qg)23.1nC@8VSwitching energy
Input Capacitance (Ciss)1.028nFInternal gate capacitance
Output Capacitance (Coss)285pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMC1029UFDB-13 Dual N/P-Channel UDFN2020-6 12V 5.6A 29mΩ@4.5V 1V
DIODES 📄 PDF
DMC1030UFDB-13 Dual N/P-Channel UDFN2020-6 12V 5.1A 34mΩ@4.5V
59mΩ@4.5V
1V
DIODES 📄 PDF
DMC1030UFDBQ-7 Dual N/P-Channel UDFN2020-6 12V 5.1A 34mΩ@4.5V 1V
DIODES 📄 PDF
DMC1030UFDB-7 Dual N/P-Channel UDFN2020-6 12V 5.1A 70mΩ@1.5V 1V
DIODES 📄 PDF
DMC2025UFDBQ-7 Dual N/P-Channel UDFN2020-6 20V 6A 25mΩ@4.5V
75mΩ@4.5V
1.4V
DIODES 📄 PDF
DMC2025UFDB-7 Dual N/P-Channel UDFN2020-6 20V 6A 140mΩ@2.5V 1.4V
DIODES 📄 PDF
DMC2025UFDBQ-13 Dual N/P-Channel UDFN2020-6 20V 6A 140mΩ@2.5V 1.4V
DIODES 📄 PDF