DMC1018UPDWQ-13 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
PowerDI5060-8
Logic-Level
DIODES
Vds Max
12V;20V
Id Max
31.3A;20.9A
Rds(on)
17mΩ@4.5V;38mΩ@4.5V
Vgs(th)
800mV;850mV
Quick Reference
The DMC1018UPDWQ-13 is a Dual N/P-Channel in a PowerDI5060-8 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 12V;20V and a continuous drain current of 31.3A;20.9A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | PowerDI5060-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 12V;20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 31.3A;20.9A | Max current handling |
| Power Dissipation (Pd) | 25W | Max thermal limit |
| On-Resistance (Rds(on)) | 17mΩ@4.5V;38mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 800mV;850mV | Voltage required to turn on |
| Gate Charge (Qg) | 17.1nC@4.5V;8.6nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 1.525nF;866pF | Internal gate capacitance |
| Output Capacitance (Coss) | 329pF;167pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||