DMC1015UPD-13 MOSFET Array Datasheet & Equivalents

Dual N/P-Channel PowerDI5060-8 Logic-Level DIODES
Vds Max
20V
Id Max
9.5A
Rds(on)
55mΩ@2.5V
Vgs(th)
1.5V

Quick Reference

The DMC1015UPD-13 is a Dual N/P-Channel in a PowerDI5060-8 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 9.5A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackagePowerDI5060-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)9.5AMax current handling
Power Dissipation (Pd)2.3WMax thermal limit
On-Resistance (Rds(on))55mΩ@2.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.5VVoltage required to turn on
Gate Charge (Qg)15.6nC@4.5VSwitching energy
Input Capacitance (Ciss)1.745nFInternal gate capacitance
Output Capacitance (Coss)310pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMC1016UPD-13 Dual N/P-Channel PowerDI5060-8 20V 9.5A 20mΩ@4.5V 1.5V
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