DK130G70 MOSFET Datasheet & Specifications
N-Channel
PDFN-8(8x8)
High-Voltage
Shenzhen DongKe Semicon
Vds Max
700V
Id Max
16A
Rds(on)
101mΩ
Vgs(th)
4V
Quick Reference
The DK130G70 is an N-Channel MOSFET in a PDFN-8(8x8) package, manufactured by Shenzhen DongKe Semicon. It supports a drain-source breakdown voltage of 700V and a continuous drain current of 16A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Shenzhen DongKe Semicon | Original Manufacturer |
| Package | PDFN-8(8x8) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 700V | Max breakdown voltage |
| Continuous Drain Current (Id) | 16A | Max current handling |
| Power Dissipation (Pd) | 33W | Max thermal limit |
| On-Resistance (Rds(on)) | 101mΩ | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | 36.5pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||