DB006NG-B MOSFET Datasheet & Specifications
N-Channel
TO-252
Logic-Level
DOINGTER
Vds Max
20V
Id Max
60A
Rds(on)
6.5mΩ@4.5V
Vgs(th)
1V
Quick Reference
The DB006NG-B is an N-Channel MOSFET in a TO-252 package, manufactured by DOINGTER. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 60A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DOINGTER | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 60A | Max current handling |
| Power Dissipation (Pd) | 37W | Max thermal limit |
| On-Resistance (Rds(on)) | 6.5mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | 22nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 1.831nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DOD60N02 | N-Channel | TO-252 | 20V | 60A | 6.5mΩ@4.5V | 1V | DOINGTER 📄 PDF |
| JSM80N03D | N-Channel | TO-252 | 30V | 80A | 4.2mΩ@10V 7.5mΩ@4.5V |
1.5V | JSMSEMI 📄 PDF |
| HB03N060S | N-Channel | TO-252 | 30V | 70A | 5.1mΩ@10V | 1.5V | R+O 📄 PDF |
| YJD120N04A | N-Channel | TO-252 | 40V | 120A | 2.8mΩ@10V | 1V | YANGJIE 📄 PDF |
| DD3R5NG | N-Channel | TO-252 | 40V | 120A | 2.8mΩ@10V | 1.5V | DOINGTER 📄 PDF |
| AOD2606-MS | N-Channel | TO-252 | 60V | 80A | 6mΩ@10V | 1.4V | MSKSEMI 📄 PDF |