CSD87503Q3ET MOSFET Array Datasheet & Equivalents
N-Channel Array
VSON-8(3.2x3.2)
Logic-Level
TI
Vds Max
30V
Id Max
10A
Rds(on)
21.9mΩ@4.5V
Vgs(th)
2.1V
Quick Reference
The CSD87503Q3ET is a N-Channel Array in a VSON-8(3.2x3.2) package, manufactured by TI. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 10A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TI | Original Manufacturer |
| Package | VSON-8(3.2x3.2) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 10A | Max current handling |
| Power Dissipation (Pd) | 15.6W | Max thermal limit |
| On-Resistance (Rds(on)) | 21.9mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.1V | Voltage required to turn on |
| Gate Charge (Qg) | 42.8nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.02nF | Internal gate capacitance |
| Output Capacitance (Coss) | 204pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| CSD87503Q3E | N-Channel Array | VSON-8(3.2x3.2) | 30V | 10A | 21.9mΩ@4.5V | 2.1V | TI 📄 PDF |