CSD86311W1723 MOSFET Array Datasheet & Equivalents
N-Channel Array
DSBGA-12
Logic-Level
TI
Vds Max
25V
Id Max
4.5A
Rds(on)
39mΩ@8V
Vgs(th)
1.4V
Quick Reference
The CSD86311W1723 is a N-Channel Array in a DSBGA-12 package, manufactured by TI. Each channel supports a drain-source breakdown voltage of 25V and a continuous drain current of 4.5A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TI | Original Manufacturer |
| Package | DSBGA-12 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 25V | Max breakdown voltage |
| Continuous Drain Current (Id) | 4.5A | Max current handling |
| Power Dissipation (Pd) | 1.5W | Max thermal limit |
| On-Resistance (Rds(on)) | 39mΩ@8V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.4V | Voltage required to turn on |
| Gate Charge (Qg) | 3.1nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 585pF | Internal gate capacitance |
| Output Capacitance (Coss) | 325pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||