CSD85302L MOSFET Array Datasheet & Equivalents
N-Channel Array
PicostAr-4(1.3x1.3)
Logic-Level
TI
Vds Max
20V
Id Max
7A
Rds(on)
18.7mΩ@6.5V
Vgs(th)
900mV
Quick Reference
The CSD85302L is a N-Channel Array in a PicostAr-4(1.3x1.3) package, manufactured by TI. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 7A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TI | Original Manufacturer |
| Package | PicostAr-4(1.3x1.3) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 7A | Max current handling |
| Power Dissipation (Pd) | 1.7W | Max thermal limit |
| On-Resistance (Rds(on)) | 18.7mΩ@6.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 900mV | Voltage required to turn on |
| Gate Charge (Qg) | 6nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 718pF | Internal gate capacitance |
| Output Capacitance (Coss) | 92pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| CSD85302LT | N-Channel Array | PicostAr-4(1.3x1.3) | 20V | 7A | 22.5mΩ@6.5V | 1.3V | TI 📄 PDF |