CSD75208W1015 MOSFET Array Datasheet & Equivalents
P-Channel Array
DSBGA-6
Logic-Level
TI
Vds Max
20V
Id Max
1.6A
Rds(on)
150mΩ@1.8V
Vgs(th)
800mV
Quick Reference
The CSD75208W1015 is a P-Channel Array in a DSBGA-6 package, manufactured by TI. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 1.6A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | TI | Original Manufacturer |
| Package | DSBGA-6 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 1.6A | Max current handling |
| Power Dissipation (Pd) | 750mW | Max thermal limit |
| On-Resistance (Rds(on)) | 150mΩ@1.8V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 800mV | Voltage required to turn on |
| Gate Charge (Qg) | 1.9nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 410pF | Internal gate capacitance |
| Output Capacitance (Coss) | 172pF | Internal output capacitance |
| Operating Temp | -40℃~+85℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| CSD75208W1015T | P-Channel Array | DSBGA-6 | 20V | 1.6A | 56mΩ@4.5V | 800mV | TI 📄 PDF |