CSD18537NQ5A MOSFET Datasheet & Specifications

N-Channel SON-8(5x6) Logic-Level TI
Vds Max
60V
Id Max
50A
Rds(on)
10mΩ@10V
Vgs(th)
3V

Quick Reference

The CSD18537NQ5A is an N-Channel MOSFET in a SON-8(5x6) package, manufactured by TI. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 50A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTIOriginal Manufacturer
PackageSON-8(5x6)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)50AMax current handling
Power Dissipation (Pd)3.2WMax thermal limit
On-Resistance (Rds(on))10mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)14nC@10VSwitching energy
Input Capacitance (Ciss)1.48nFInternal gate capacitance
Output Capacitance (Coss)177pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CSD18532Q5B N-Channel SON-8(5x6) 60V 100A 2.5mΩ@10V 1.8V
CSD18563Q5A N-Channel SON-8(5x6) 60V 100A 5.7mΩ@10V 2V
CSD19532Q5B N-Channel SON-8(5x6) 100V 100A 4.6mΩ@6V 2.6V
CSD19534Q5A N-Channel SON-8(5x6) 100V 50A 17.6mΩ@6V 3.4V