CSD17308Q3 MOSFET Datasheet & Specifications

N-Channel VSON-CLIP-8(3.3x3.3) Logic-Level TI
Vds Max
30V
Id Max
50A
Rds(on)
12.5mΩ@3V
Vgs(th)
1.8V

Quick Reference

The CSD17308Q3 is an N-Channel MOSFET in a VSON-CLIP-8(3.3x3.3) package, manufactured by TI. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 50A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTIOriginal Manufacturer
PackageVSON-CLIP-8(3.3x3.3)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)50AMax current handling
Power Dissipation (Pd)28WMax thermal limit
On-Resistance (Rds(on))12.5mΩ@3VResistance when turned fully on
Gate Threshold (Vgs(th))1.8VVoltage required to turn on
Gate Charge (Qg)3.9nC@4.5VSwitching energy
Input Capacitance (Ciss)700pFInternal gate capacitance
Output Capacitance (Coss)365pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CSD17575Q3 N-Channel VSON-CLIP-8(3.3x3.3) 30V 60A 1.9mΩ@10V 1.4V
CSD17304Q3 N-Channel VSON-CLIP-8(3.3x3.3) 30V 56A 5.9mΩ@8V 1.8V