CSD16301Q2 MOSFET Datasheet & Specifications

N-Channel WSON-6(2x2) Logic-Level TI
Vds Max
25V
Id Max
20A
Rds(on)
34mΩ@3V
Vgs(th)
1.55V

Quick Reference

The CSD16301Q2 is an N-Channel MOSFET in a WSON-6(2x2) package, manufactured by TI. It supports a drain-source breakdown voltage of 25V and a continuous drain current of 20A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerTIOriginal Manufacturer
PackageWSON-6(2x2)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)25VMax breakdown voltage
Continuous Drain Current (Id)20AMax current handling
Power Dissipation (Pd)15WMax thermal limit
On-Resistance (Rds(on))34mΩ@3VResistance when turned fully on
Gate Threshold (Vgs(th))1.55VVoltage required to turn on
Gate Charge (Qg)2.8nC@4.5VSwitching energy
Input Capacitance (Ciss)340pFInternal gate capacitance
Output Capacitance (Coss)215pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CSD17571Q2 N-Channel WSON-6(2x2) 30V 22A 29mΩ@4.5V 2V