CJAC1R3SN04C MOSFET Datasheet & Specifications

N-Channel PDFNWB5x6-8L Logic-Level JSCJ
Vds Max
40V
Id Max
190A
Rds(on)
1.4mΩ@4.5V
Vgs(th)
2.5V

Quick Reference

The CJAC1R3SN04C is an N-Channel MOSFET in a PDFNWB5x6-8L package, manufactured by JSCJ. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 190A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerJSCJOriginal Manufacturer
PackagePDFNWB5x6-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)190AMax current handling
Power Dissipation (Pd)96WMax thermal limit
On-Resistance (Rds(on))1.4mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)78.5nC@10VSwitching energy
Input Capacitance (Ciss)5.31nFInternal gate capacitance
Output Capacitance (Coss)1.85nFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
CJAC200SN04U N-Channel PDFNWB5x6-8L 40V 200A 1.05mΩ@4.5V 2.5V