CJAC110SN10H MOSFET Datasheet & Specifications
N-Channel
PDFNWB5x6-8L
High-Current
JSCJ
Vds Max
100V
Id Max
110A
Rds(on)
5.2mΩ@10V
Vgs(th)
4V
Quick Reference
The CJAC110SN10H is an N-Channel MOSFET in a PDFNWB5x6-8L package, manufactured by JSCJ. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 110A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | PDFNWB5x6-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 110A | Max current handling |
| Power Dissipation (Pd) | 130W | Max thermal limit |
| On-Resistance (Rds(on)) | 5.2mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 142nC@15V | Switching energy |
| Input Capacitance (Ciss) | 6.134nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.376nF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| CJAC110SN10A | N-Channel | PDFNWB5x6-8L | 100V | 110A | 4.2mΩ@10V | 2.4V | JSCJ 📄 PDF |