CJ3139KDW-G MOSFET Array Datasheet & Equivalents
P-Channel Array
SOT-363
Logic-Level
Comchip
Vds Max
20V
Id Max
660mA
Rds(on)
520mΩ@4.5V
Vgs(th)
1.1V
Quick Reference
The CJ3139KDW-G is a P-Channel Array in a SOT-363 package, manufactured by Comchip. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 660mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Comchip | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 660mA | Max current handling |
| Power Dissipation (Pd) | 150mW | Max thermal limit |
| On-Resistance (Rds(on)) | 520mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.1V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 170pF | Internal gate capacitance |
| Output Capacitance (Coss) | 25pF | Internal output capacitance |
| Operating Temp | -40℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SI2129DW-TP | P-Channel Array | SOT-363 | 20V | 1A | 250mΩ@1.8V | 1V | MCC 📄 PDF |
| DMP2200UDW-13 | P-Channel Array | SOT-363 | 20V | 900mA | 260mΩ@4.5V | 1.2V | DIODES 📄 PDF |
| SL3139KDW | P-Channel Array | SOT-363 | 20V | 660mA | 380mΩ@4.5V | 650mV | Slkor 📄 PDF |
| SI1967DH-T1-GE3 | P-Channel Array | SOT-363 | 20V | 1.3A | 490mΩ@4.5V | 400mV | VISHAY 📄 PDF |