BU508AW Datasheet & Equivalents
NPN
TO-247
High Power
ST
VCEO
700V
Ic Max
8A
Pd Max
125W
hFE Gain
5
Quick Reference
The BU508AW is a NPN bipolar junction transistor in a TO-247 package, manufactured by ST. It supports a breakdown voltage of 700V and continuous collector current of 8A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ST | Original Manufacturer |
| Package | TO-247 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 700V | Max breakdown voltage |
| Collector Current (Ic) | 8A | Max current handling |
| Power Dissipation (Pd) | 125W | Max thermal limit |
| DC Current Gain (hFE) | 5 | Base signal amplification ratio |
| Transition Frequency (fT) | - | Max operating frequency |
| Saturation Voltage (VCEsat) | 1V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 9V | Max emitter-base breakdown |
| Collector Cutoff Current | 2mA | Leakage current when OFF |
| Operating Temp | -65℃~+150℃ | Safe junction temperature range |