BSZ123N08NS3G MOSFET Datasheet & Specifications
N-Channel
TSDSON-8FL
High-Current
Infineon
Vds Max
80V
Id Max
56A
Rds(on)
12.3mΩ@10V
Vgs(th)
3.5V
Quick Reference
The BSZ123N08NS3G is an N-Channel MOSFET in a TSDSON-8FL package, manufactured by Infineon. It supports a drain-source breakdown voltage of 80V and a continuous drain current of 56A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | TSDSON-8FL | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 80V | Max breakdown voltage |
| Continuous Drain Current (Id) | 56A | Max current handling |
| Power Dissipation (Pd) | 66W | Max thermal limit |
| On-Resistance (Rds(on)) | 12.3mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.5V | Voltage required to turn on |
| Gate Charge (Qg) | 25nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.7nF | Internal gate capacitance |
| Output Capacitance (Coss) | 470pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| BSZ096N10LS5 | N-Channel | TSDSON-8FL | 100V | 62A | 9.6mΩ@10V | 1.7V | Infineon 📄 PDF |