BSZ067N06LS3 G MOSFET Datasheet & Specifications
N-Channel
TSDSON-8FL
Logic-Level
Infineon
Vds Max
60V
Id Max
20A
Rds(on)
6.7mΩ@10V
Vgs(th)
2.2V
Quick Reference
The BSZ067N06LS3 G is an N-Channel MOSFET in a TSDSON-8FL package, manufactured by Infineon. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 20A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | TSDSON-8FL | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 20A | Max current handling |
| Power Dissipation (Pd) | 69W | Max thermal limit |
| On-Resistance (Rds(on)) | 6.7mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.2V | Voltage required to turn on |
| Gate Charge (Qg) | 51nC@10V | Switching energy |
| Input Capacitance (Ciss) | 3.8nF | Internal gate capacitance |
| Output Capacitance (Coss) | 710pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| BSZ100N06LS3G | N-Channel | TSDSON-8FL | 60V | 20A | 17.9mΩ@4.5V | 2.2V | Infineon 📄 PDF |
| BSZ070N08LS5 | N-Channel | TSDSON-8FL | 80V | 40A | 7mΩ@10V | 1.7V | Infineon 📄 PDF |
| BSZ096N10LS5 | N-Channel | TSDSON-8FL | 100V | 62A | 9.6mΩ@10V | 1.7V | Infineon 📄 PDF |