BSS84DW-7-F MOSFET Array Datasheet & Equivalents

P-Channel Array SOT-363 Logic-Level DIODES
Vds Max
50V
Id Max
130mA
Rds(on)
10ฮฉ@5V
Vgs(th)
2V

Quick Reference

The BSS84DW-7-F is a P-Channel Array in a SOT-363 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 50V and a continuous drain current of 130mA. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-363Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)50VMax breakdown voltage
Continuous Drain Current (Id)130mAMax current handling
Power Dissipation (Pd)300mWMax thermal limit
On-Resistance (Rds(on))10ฮฉ@5VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)45pFInternal gate capacitance
Output Capacitance (Coss)25pFInternal output capacitance
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
BSS84DW-TP P-Channel Array SOT-363 50V 160mA 2.2ฮฉ@10V 2V
BSS84DWQ-13 P-Channel Array SOT-363 50V 130mA 10ฮฉ@5V 2V
BSS84KDW-TP P-Channel Array SOT-363 60V 320mA 7ฮฉ@4.5V 2V
PJT7839_R1_00001 P-Channel Array SOT-363 60V 250mA 13ฮฉ@2.5V 2.5V