BSS8402DWQ-13 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SOT-363
Logic-Level
DIODES
Vds Max
60V;50V
Id Max
130mA
Rds(on)
13.5ฮฉ@10V
Vgs(th)
2.5V
Quick Reference
The BSS8402DWQ-13 is a Dual N/P-Channel in a SOT-363 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 60V;50V and a continuous drain current of 130mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V;50V | Max breakdown voltage |
| Continuous Drain Current (Id) | 130mA | Max current handling |
| Power Dissipation (Pd) | 200mW | Max thermal limit |
| On-Resistance (Rds(on)) | 13.5ฮฉ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 50pF | Internal gate capacitance |
| Output Capacitance (Coss) | 25pF | Internal output capacitance |
| Operating Temp | -55โ~+150โ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| BSS8402DW-TP | Dual N/P-Channel | SOT-363 | 60V | 130mA | 3.75ฮฉ@10V | 2V | MCC ๐ PDF |
| PJT7603_R1_00001 | Dual N/P-Channel | SOT-363 | 60V | 400mA | 6ฮฉ@4.5V | 2.5V | PANJIT ๐ PDF |
| MC7252KDW-TP | Dual N/P-Channel | SOT-363 | 60V | 340mA | 10ฮฉ@10V | 2.5V | MCC ๐ PDF |
| BSS8402DW-7-F | Dual N/P-Channel | SOT-363 | 60V | 130mA | 13.5ฮฉ@10V | 2.5V | DIODES ๐ PDF |