BSS816NWH6327 MOSFET Datasheet & Specifications
N-Channel
SOT-323
Logic-Level
Infineon
Vds Max
20V
Id Max
1.4A
Rds(on)
240mΩ@1.8V
Vgs(th)
750mV
Quick Reference
The BSS816NWH6327 is an N-Channel MOSFET in a SOT-323 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 1.4A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | SOT-323 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 1.4A | Max current handling |
| Power Dissipation (Pd) | 500mW | Max thermal limit |
| On-Resistance (Rds(on)) | 240mΩ@1.8V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 750mV | Voltage required to turn on |
| Gate Charge (Qg) | 600pC@2.5V | Switching energy |
| Input Capacitance (Ciss) | 180pF | Internal gate capacitance |
| Output Capacitance (Coss) | 67pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||