BSS131H6327 MOSFET Datasheet & Specifications
N-Channel
SOT-23
Logic-Level
Infineon
Vds Max
240V
Id Max
110mA
Rds(on)
14Ω@10V
Vgs(th)
1.8V
Quick Reference
The BSS131H6327 is an N-Channel MOSFET in a SOT-23 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 240V and a continuous drain current of 110mA. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 240V | Max breakdown voltage |
| Continuous Drain Current (Id) | 110mA | Max current handling |
| Power Dissipation (Pd) | 360mW | Max thermal limit |
| On-Resistance (Rds(on)) | 14Ω@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.8V | Voltage required to turn on |
| Gate Charge (Qg) | 3.1nC@10V | Switching energy |
| Input Capacitance (Ciss) | 77pF | Internal gate capacitance |
| Output Capacitance (Coss) | 10pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||