BSP52T1G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNSOT-223General Purpose
VCEO
80V
Ic Max
1A
Pd Max
800mW
Gain
2000

Quick Reference

The BSP52T1G is a NPN bipolar transistor in a SOT-223 package. This datasheet provides complete specifications including 80V breakdown voltage and 1A continuous collector current. Download the BSP52T1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting
VCEO80VBreakdown voltage
IC Max1ACollector current
Pd Max800mWPower dissipation
Gain2000DC current gain
Frequency-Transition speed
VCEsat1.3VSaturation voltage
Vebo-Emitter-Base voltage
Temp-65โ„ƒ~+150โ„ƒ@(Tj)Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
ZX5T851GTANPNSOT-22360V6A1.6W
BCP56-16NPNSOT-22380V1A1.5W
STN851NPNSOT-22360V5A1.6W
FZT493TANPNSOT-223100V1A3W
BCP55TANPNSOT-22360V1A2W
BCP5616QTANPNSOT-22380V1A2W
BCP5616TANPNSOT-22380V1A2W
FZT653TANPNSOT-223100V3A2W
BCP56TANPNSOT-22380V1A2W
BCP56-16T1GNPNSOT-22380V1A1.5W