BSP52T1G Datasheet & Equivalents

NPN SOT-223 General Purpose onsemi
VCEO
80V
Ic Max
1A
Pd Max
800mW
hFE Gain
2000

Quick Reference

The BSP52T1G is a NPN bipolar junction transistor in a SOT-223 package, manufactured by onsemi. It supports a breakdown voltage of 80V and continuous collector current of 1A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)80VMax breakdown voltage
Collector Current (Ic)1AMax current handling
Power Dissipation (Pd)800mWMax thermal limit
DC Current Gain (hFE)2000Base signal amplification ratio
Transition Frequency (fT)-Max operating frequency
Saturation Voltage (VCEsat)1.3VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current10uALeakage current when OFF
Operating Temp-65โ„ƒ~+150โ„ƒ@(Tj)Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BCP56-16TX-CN NPN SOT-223 80V 1A 580 1.5W
ChipNobo ๐Ÿ“„ PDF
BCP56-10-JSM NPN SOT-223 80V 1A 250 1.5W
BCP56-16T3G NPN SOT-223 80V 1A 250 1.5W
BCP56-MS NPN SOT-223 80V 1A 250 1.5W
BCP56 NPN SOT-223 80V 1A 250 1.5W
HXY MOSFET ๐Ÿ“„ PDF
BCP56 NPN SOT-223 80V 1A 250 1.5W
BCP56 NPN SOT-223 80V 1A 250 1.33W
BCP56 NPN SOT-223 80V 1A 250 1.5W
GOODWORK ๐Ÿ“„ PDF
BCP56-16 NPN SOT-223 80V 1A 250 1.5W
HT(Shenzhen J... ๐Ÿ“„ PDF
BCP56-16 NPN SOT-223 80V 1A 250 1.5W
BCP56-16 NPN SOT-223 80V 1A 250 1.5W
BCP56-10 NPN SOT-223 80V 1A 160 1.5W
BCP56-16 NPN SOT-223 80V 1A 160 1.33W
BCP56(RANGE:100-250) NPN SOT-223 80V 1A 100 1.5W
BCP56-16T1G NPN SOT-223 80V 1A 100 1.5W
BCP56-16TX NPN SOT-223 80V 1A 100 600mW
Nexperia ๐Ÿ“„ PDF
BCP5616QTA NPN SOT-223 80V 1A 100 2W
SBCP56-16T3G NPN SOT-223 80V 1A 100 1.5W
BCP56-16 NPN SOT-223 80V 1A 100 1.5W
BCP56 NPN SOT-223 80V 1A 63 1.35W
Nexperia ๐Ÿ“„ PDF