BSP135H6327 MOSFET Datasheet & Specifications
N-Channel
SOT-223-4
Logic-Level
Infineon
Vds Max
600V
Id Max
120mA
Rds(on)
60Ω@0V
Vgs(th)
1V
Quick Reference
The BSP135H6327 is an N-Channel MOSFET in a SOT-223-4 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 600V and a continuous drain current of 120mA. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | SOT-223-4 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 600V | Max breakdown voltage |
| Continuous Drain Current (Id) | 120mA | Max current handling |
| Power Dissipation (Pd) | 1.8W | Max thermal limit |
| On-Resistance (Rds(on)) | 60Ω@0V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | 4.9nC@3V | Switching energy |
| Input Capacitance (Ciss) | 146pF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||