BSL308CH6327XTSA1 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
TSOP-6
Logic-Level
Infineon
Vds Max
30V
Id Max
2.3A
Rds(on)
62mΩ@10V;44mΩ@10V
Vgs(th)
1.5V;1.6V
Quick Reference
The BSL308CH6327XTSA1 is a Dual N/P-Channel in a TSOP-6 package, manufactured by Infineon. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 2.3A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | TSOP-6 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 2.3A | Max current handling |
| Power Dissipation (Pd) | 500mW | Max thermal limit |
| On-Resistance (Rds(on)) | 62mΩ@10V;44mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V;1.6V | Voltage required to turn on |
| Gate Charge (Qg) | 5nC@10V | Switching energy |
| Input Capacitance (Ciss) | 376pF;207pF | Internal gate capacitance |
| Output Capacitance (Coss) | 196pF;75pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SI3552DV-T1-GE3 | Dual N/P-Channel | TSOP-6 | 30V | 2.5A | 105mΩ@10V 200mΩ@10V |
1V | VISHAY 📄 PDF |
| SI3590DV-T1-GE3 | Dual N/P-Channel | TSOP-6 | 30V | 3A | 120mΩ@2.5V | 600mV | VISHAY 📄 PDF |
| NTGD4167CT1G | Dual N/P-Channel | TSOP-6 | 30V | 2.6A | 300mΩ@2.5V | 1.5V | onsemi 📄 PDF |