BSC155N06ND MOSFET Array Datasheet & Equivalents
N-Channel Array
TDSON-8-EP(5x6)
Standard Power
Infineon
Vds Max
60V
Id Max
20A
Rds(on)
15.5mΩ@10V
Vgs(th)
4V
Quick Reference
The BSC155N06ND is a N-Channel Array in a TDSON-8-EP(5x6) package, manufactured by Infineon. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 20A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | TDSON-8-EP(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 20A | Max current handling |
| Power Dissipation (Pd) | 50W | Max thermal limit |
| On-Resistance (Rds(on)) | 15.5mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 29nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.25nF | Internal gate capacitance |
| Output Capacitance (Coss) | 380pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||