BSC150N03LDGATMA1 MOSFET Array Datasheet & Equivalents

N-Channel Array TDSON-8 Logic-Level Infineon
Vds Max
30V
Id Max
20A
Rds(on)
15mΩ@10V
Vgs(th)
2.2V

Quick Reference

The BSC150N03LDGATMA1 is a N-Channel Array in a TDSON-8 package, manufactured by Infineon. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 20A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageTDSON-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)20AMax current handling
Power Dissipation (Pd)26WMax thermal limit
On-Resistance (Rds(on))15mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.2VVoltage required to turn on
Gate Charge (Qg)13.2nC@10VSwitching energy
Input Capacitance (Ciss)1.1nFInternal gate capacitance
Output Capacitance (Coss)470pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
IAUC60N04S6L030HATMA1 N-Channel Array TDSON-8 40V 60A 3mΩ@10V 2V
Infineon 📄 PDF
IAUC60N04S6L045HATMA1 N-Channel Array TDSON-8 40V 60A 4.5mΩ@10V 2V
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IAUC45N04S6L063HATMA1 N-Channel Array TDSON-8 40V 45A 6.3mΩ@10V 2V
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IPG20N04S4L11AATMA1 N-Channel Array TDSON-8 40V 20A 11.6mΩ@10V 2.2V
Infineon 📄 PDF
IPG20N06S2L35ATMA1 N-Channel Array TDSON-8 55V 20A 44mΩ@4.5V 2V
Infineon 📄 PDF
IPG20N06S2L65ATMA1 N-Channel Array TDSON-8 55V 20A 65mΩ@10V 2V
Infineon 📄 PDF
IPG20N06S2L65AATMA1 N-Channel Array TDSON-8 55V 20A 65mΩ@10V 2V
Infineon 📄 PDF
BSC112N06LDATMA1 N-Channel Array TDSON-8 60V 57A 15.8mΩ@4.5V 2.2V
Infineon 📄 PDF
IPG20N06S4L26ATMA1 N-Channel Array TDSON-8 60V 20A 26mΩ@10V 2.2V
Infineon 📄 PDF
IPG20N10S4L22ATMA1 N-Channel Array TDSON-8 100V 20A 22mΩ@10V 2.1V
Infineon 📄 PDF