BSC093N04LSG-MS MOSFET Datasheet & Specifications

N-Channel DFN5x6-8L Logic-Level MSKSEMI
Vds Max
40V
Id Max
50A
Rds(on)
14mΩ@10V
Vgs(th)
2.5V

Quick Reference

The BSC093N04LSG-MS is an N-Channel MOSFET in a DFN5x6-8L package, manufactured by MSKSEMI. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 50A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageDFN5x6-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)50AMax current handling
Power Dissipation (Pd)-Max thermal limit
On-Resistance (Rds(on))14mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)24nC@10VSwitching energy
Input Capacitance (Ciss)1.54nFInternal gate capacitance
Output Capacitance (Coss)171pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
WSD4076DN56 N-Channel DFN5x6-8L 40V 76A 6.9mΩ@10V 1.5V
Winsok Semicon 📄 PDF
AON6236-MS N-Channel DFN5x6-8L 40V 50A 14mΩ@10V 2.5V
MSKSEMI 📄 PDF