BSC036NE7NS3 G MOSFET Datasheet & Specifications
N-Channel
TDSON-8
High-Current
Infineon
Vds Max
75V
Id Max
100A
Rds(on)
2.9mΩ@10V
Vgs(th)
3.1V
Quick Reference
The BSC036NE7NS3 G is an N-Channel MOSFET in a TDSON-8 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 75V and a continuous drain current of 100A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | TDSON-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 75V | Max breakdown voltage |
| Continuous Drain Current (Id) | 100A | Max current handling |
| Power Dissipation (Pd) | 156W | Max thermal limit |
| On-Resistance (Rds(on)) | 2.9mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.1V | Voltage required to turn on |
| Gate Charge (Qg) | 63.4nC@10V | Switching energy |
| Input Capacitance (Ciss) | 4.4nF | Internal gate capacitance |
| Output Capacitance (Coss) | 990pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| ISC0802NLSATMA1 | N-Channel | TDSON-8 | 100V | 150A | 3.3mΩ@10V 4.3mΩ@4.5V |
1.6V | Infineon 📄 PDF |