BSC030P03NS3G MOSFET Datasheet & Specifications
P-Channel
TDSON-8(5x6)
High-Current
Infineon
Vds Max
30V
Id Max
100A
Rds(on)
3mΩ@6V
Vgs(th)
3.1V
Quick Reference
The BSC030P03NS3G is an P-Channel MOSFET in a TDSON-8(5x6) package, manufactured by Infineon. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 100A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Infineon | Original Manufacturer |
| Package | TDSON-8(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 100A | Max current handling |
| Power Dissipation (Pd) | 125W | Max thermal limit |
| On-Resistance (Rds(on)) | 3mΩ@6V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3.1V | Voltage required to turn on |
| Gate Charge (Qg) | 186nC@10V | Switching energy |
| Input Capacitance (Ciss) | 14nF | Internal gate capacitance |
| Output Capacitance (Coss) | 6.24nF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||