BSC015NE2LS5I MOSFET Datasheet & Specifications

N-Channel TDSON-8(5x6) Logic-Level Infineon
Vds Max
25V
Id Max
147A
Rds(on)
1.5mΩ@10V
Vgs(th)
2V

Quick Reference

The BSC015NE2LS5I is an N-Channel MOSFET in a TDSON-8(5x6) package, manufactured by Infineon. It supports a drain-source breakdown voltage of 25V and a continuous drain current of 147A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageTDSON-8(5x6)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)25VMax breakdown voltage
Continuous Drain Current (Id)147AMax current handling
Power Dissipation (Pd)50WMax thermal limit
On-Resistance (Rds(on))1.5mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)14nC@4.5VSwitching energy
Input Capacitance (Ciss)2nFInternal gate capacitance
Output Capacitance (Coss)1nFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
BSC011N03LS N-Channel TDSON-8(5x6) 30V 400A 1.4mΩ@4.5V 2V
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