BMW65N065UC1 MOSFET Datasheet & Specifications

N-Channel TO247-3 High-Voltage Bestirpower
Vds Max
650V
Id Max
55A
Rds(on)
65mΩ@10V
Vgs(th)
3.8V

Quick Reference

The BMW65N065UC1 is an N-Channel MOSFET in a TO247-3 package, manufactured by Bestirpower. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 55A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerBestirpowerOriginal Manufacturer
PackageTO247-3Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)650VMax breakdown voltage
Continuous Drain Current (Id)55AMax current handling
Power Dissipation (Pd)500WMax thermal limit
On-Resistance (Rds(on))65mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3.8VVoltage required to turn on
Gate Charge (Qg)73nC@10VSwitching energy
Input Capacitance (Ciss)3.99nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
BMW65N050UE1 N-Channel TO247-3 650V 75A 50mΩ@10V 4.2V
Bestirpower
GC3M0016120D N-Channel TO247-3 1.2kV 115A 16mΩ@15V 2.5V
SUPSiC 📄 PDF
GC3M0021120D N-Channel TO247-3 1.2kV 81A 21mΩ@15V 2.5V
SUPSiC 📄 PDF
GC2M0045170D N-Channel TO247-3 1.7kV 72A 45mΩ@20V 2.6V
SUPSiC 📄 PDF