BMQ100N38 MOSFET Datasheet & Specifications

N-Channel DFN3333-8L Logic-Level BORN
Vds Max
100V
Id Max
38A
Rds(on)
9mΩ@10V
Vgs(th)
2.5V

Quick Reference

The BMQ100N38 is an N-Channel MOSFET in a DFN3333-8L package, manufactured by BORN. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 38A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerBORNOriginal Manufacturer
PackageDFN3333-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)38AMax current handling
Power Dissipation (Pd)23WMax thermal limit
On-Resistance (Rds(on))9mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)17nC@10VSwitching energy
Input Capacitance (Ciss)2.2nFInternal gate capacitance
Output Capacitance (Coss)445pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
No exact equivalents found in database.