BLP016N04LC-Q MOSFET Datasheet & Specifications
N-Channel
PDFN5x6
Logic-Level
BL
Vds Max
40V
Id Max
195A
Rds(on)
1.25mΩ@10V;1.8mΩ@4.5V
Vgs(th)
1.75V
Quick Reference
The BLP016N04LC-Q is an N-Channel MOSFET in a PDFN5x6 package, manufactured by BL. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 195A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | BL | Original Manufacturer |
| Package | PDFN5x6 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 40V | Max breakdown voltage |
| Continuous Drain Current (Id) | 195A | Max current handling |
| Power Dissipation (Pd) | 115.3W | Max thermal limit |
| On-Resistance (Rds(on)) | 1.25mΩ@10V;1.8mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.75V | Voltage required to turn on |
| Gate Charge (Qg) | 61nC@10V | Switching energy |
| Input Capacitance (Ciss) | 3.619nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1.632nF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||