BFR193WH6327 Datasheet & Equivalents

NPN SOT-323 General Purpose Infineon
VCEO
12V
Ic Max
80mA
Pd Max
580mW
hFE Gain
70

Quick Reference

The BFR193WH6327 is a NPN bipolar junction transistor in a SOT-323 package, manufactured by Infineon. It supports a breakdown voltage of 12V and continuous collector current of 80mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)12VMax breakdown voltage
Collector Current (Ic)80mAMax current handling
Power Dissipation (Pd)580mWMax thermal limit
DC Current Gain (hFE)70Base signal amplification ratio
Transition Frequency (fT)8GHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)2VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SC4226 R24 NPN SOT-323 12V 100mA 70 150mW
L2SC3356WT1G NPN SOT-323 12V 100mA 82 150mW
2SC4226-H NPN SOT-323 12V 100mA - 150mW
2SC4226-M NPN SOT-323 12V 100mA - 150mW
2SC4226 NPN SOT-323 12V 100mA 150 150mW
2SC4226 R25 NPN SOT-323 12V 100mA 250 150mW
2SC4226 R25-MS NPN SOT-323 12V 100mA 250 150mW
FCS520 NPN SOT-323 12V 100mA 250 150mW
GUOXIN JIAPIN... ๐Ÿ“„ PDF
BC848AW NPN SOT-323 30V 100mA 110 150mW
BC848BWT106 NPN SOT-323 30V 100mA 200 200mW
LBC848BWT1G NPN SOT-323 30V 100mA 200 150mW
BC848BW NPN SOT-323 30V 100mA 290 150mW
BC849CW NPN SOT-323 30V 100mA 420 200mW
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115 NPN SOT-323 30V 100mA 450 150mW