BF820-QR Datasheet & Equivalents
NPN
SOT-89
General Purpose
Nexperia
VCEO
300V
Ic Max
50mA
Pd Max
250mW
hFE Gain
50
Quick Reference
The BF820-QR is a NPN bipolar junction transistor in a SOT-89 package, manufactured by Nexperia. It supports a breakdown voltage of 300V and continuous collector current of 50mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 300V | Max breakdown voltage |
| Collector Current (Ic) | 50mA | Max current handling |
| Power Dissipation (Pd) | 250mW | Max thermal limit |
| DC Current Gain (hFE) | 50 | Base signal amplification ratio |
| Transition Frequency (fT) | 60MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 600mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | - | Safe junction temperature range |