BD238 Transistor Datasheet & Specifications

PNP BJT | HXY MOSFET

PNPTO-126General Purpose
VCEO
100V
Ic Max
1.5A
Pd Max
1W
Gain
250@0.1A,2V

Quick Reference

The BD238 is a PNP bipolar transistor in a TO-126 package. This datasheet provides complete specifications including 100V breakdown voltage and 1.5A continuous collector current. Download the BD238 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting
VCEO100VBreakdown voltage
IC Max1.5ACollector current
Pd Max1WPower dissipation
Gain250@0.1A,2VDC current gain
Frequency50MHzTransition speed
VCEsat500mV@2A,0.2ASaturation voltage
Vebo6VEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MJE172PNPTO-12680V3A12.5W
BD140PNPTO-12680V1.5A1.25W
BD680ASTU-HXYPNPTO-12680V4A2W