BD237STU-HXY Transistor Datasheet & Specifications

NPN BJT | HXY MOSFET

NPNTO-126General Purpose
VCEO
100V
Ic Max
15A
Pd Max
1W
Gain
300@0.2A,5V
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Quick Reference

The BD237STU-HXY is a NPN bipolar transistor in a TO-126 package. This datasheet provides complete specifications including 100V breakdown voltage and 15A continuous collector current. Download the BD237STU-HXY datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting
VCEO100VBreakdown voltage
IC Max15ACollector current
Pd Max1WPower dissipation
Gain300@0.2A,5VDC current gain
Frequency50MHzTransition speed
VCEsat500mV@2A,0.2ASaturation voltage
Vebo6VEmitter-Base voltage
Temp-55℃~+150℃Operating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
BD140PNPTO-12680V1.5A1.25W
BD139NPNTO-12680V1.5A12.5W
KTD600K-Y-U/PHNPNTO-126120V1A1.5W
BD681NPNTO-126100V4A40W
BD441NPNTO-12680V4A25W
BD139-16NPNTO-12680V1.5A12.5W
MJE182NPNTO-12680V3A12.5W
BD681NPNTO-126100V4A40W
BD13916STU-HXYNPNTO-12680V1.5A1W
View all TO-126 NPN Transistors ›