BD237 Datasheet & Equivalents
NPN
TO-126F
High Power
JSCJ
VCEO
80V
Ic Max
2A
Pd Max
25W
hFE Gain
25
Quick Reference
The BD237 is a NPN bipolar junction transistor in a TO-126F package, manufactured by JSCJ. It supports a breakdown voltage of 80V and continuous collector current of 2A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | TO-126F | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 80V | Max breakdown voltage |
| Collector Current (Ic) | 2A | Max current handling |
| Power Dissipation (Pd) | 25W | Max thermal limit |
| DC Current Gain (hFE) | 25 | Base signal amplification ratio |
| Transition Frequency (fT) | 3MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 600mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 100uA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||