BD236STU-HXY Transistor Datasheet & Specifications

PNP BJT | HXY MOSFET

PNPTO-126General Purpose
VCEO
60V
Ic Max
2A
Pd Max
1W
Gain
-

Quick Reference

The BD236STU-HXY is a PNP bipolar transistor in a TO-126 package. This datasheet provides complete specifications including 60V breakdown voltage and 2A continuous collector current. Download the BD236STU-HXY datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting
VCEO60VBreakdown voltage
IC Max2ACollector current
Pd Max1WPower dissipation
Gain-DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo50MHzEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
KTA1715-Y-U/PHPNPTO-12650V2A10W
KTB1151-Y-U/PHPNPTO-12660V5A20W