BCW120N160W1 MOSFET Datasheet & Specifications

N-Channel TO-247-3L High-Voltage Bestirpower
Vds Max
1.2kV
Id Max
22A
Rds(on)
160mΩ
Vgs(th)
3.5V

Quick Reference

The BCW120N160W1 is an N-Channel MOSFET in a TO-247-3L package, manufactured by Bestirpower. It supports a drain-source breakdown voltage of 1.2kV and a continuous drain current of 22A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerBestirpowerOriginal Manufacturer
PackageTO-247-3LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)1.2kVMax breakdown voltage
Continuous Drain Current (Id)22AMax current handling
Power Dissipation (Pd)126WMax thermal limit
On-Resistance (Rds(on))160mΩResistance when turned fully on
Gate Threshold (Vgs(th))3.5VVoltage required to turn on
Gate Charge (Qg)40nCSwitching energy
Input Capacitance (Ciss)550pFInternal gate capacitance
Output Capacitance (Coss)28pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
S1M040120D N-Channel TO-247-3L 1.2kV 73A 32mΩ@18V 2.8V
Sichainsemi 📄 PDF
SP50N120CTF N-Channel TO-247-3L 1.2kV 74A 35mΩ@18V 2.5V
Siliup 📄 PDF
S1M075120D2 N-Channel TO-247-3L 1.2kV 44A 75mΩ@15V 2.8V
Sichainsemi 📄 PDF