BCP56-10T1G Transistor Datasheet & Specifications

NPN BJT | onsemi

NPNSOT-223General Purpose
VCEO
-
Ic Max
80V
Pd Max
1A
Gain
-65โ„ƒ~+150โ„ƒ

Quick Reference

The BCP56-10T1G is a NPN bipolar transistor in a SOT-223 package. This datasheet provides complete specifications including - breakdown voltage and 80V continuous collector current. Download the BCP56-10T1G datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting
VCEO-Breakdown voltage
IC Max80VCollector current
Pd Max1APower dissipation
Gain-65โ„ƒ~+150โ„ƒDC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo130MHzEmitter-Base voltage
Temp1.5WOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
BCP5616QTCNPNSOT-223-80V1A
BCP55-16NPNSOT-22360V1A1.5W
BCP56NPNSOT-223-380V1A1.33W
FZT657QTANPNSOT-223-300V500mA
CZT5551NPNSOT-223-160V-
BCP56-10HXNPNSOT-223-80V1A
SZT560ANPNSOT-223-60V3A
LBSS4350SZ4TZHGNPNSOT-223-50V3A
BCP5510TANPNSOT-223-60V1A