BCBF65N45M1 MOSFET Datasheet & Specifications

N-Channel TO-263-7L Logic-Level Bestirpower
Vds Max
650V
Id Max
44A
Rds(on)
45mฮฉ
Vgs(th)
2.8V

Quick Reference

The BCBF65N45M1 is an N-Channel MOSFET in a TO-263-7L package, manufactured by Bestirpower. It supports a drain-source breakdown voltage of 650V and a continuous drain current of 44A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerBestirpowerOriginal Manufacturer
PackageTO-263-7LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)650VMax breakdown voltage
Continuous Drain Current (Id)44AMax current handling
Power Dissipation (Pd)150WMax thermal limit
On-Resistance (Rds(on))45mฮฉResistance when turned fully on
Gate Threshold (Vgs(th))2.8VVoltage required to turn on
Gate Charge (Qg)56nCSwitching energy
Input Capacitance (Ciss)1.048nFInternal gate capacitance
Output Capacitance (Coss)131pFInternal output capacitance
Operating Temp-55โ„ƒ~+175โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
SG2M040075JJ N-Channel TO-263-7L 750V 69A - 2.8V
Sichainsemi ๐Ÿ“„ PDF
BCBF120N40M1 N-Channel TO-263-7L 1.2kV 60A 40mฮฉ 3V
Bestirpower ๐Ÿ“„ PDF