BC857BLP-7 Datasheet & Equivalents
PNP
DFN-3 (0.6x1)
General Purpose
DIODES
VCEO
45V
Ic Max
100mA
Pd Max
1W
hFE Gain
220
Quick Reference
The BC857BLP-7 is a PNP bipolar junction transistor in a DFN-3 (0.6x1) package, manufactured by DIODES. It supports a breakdown voltage of 45V and continuous collector current of 100mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | DFN-3 (0.6x1) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 45V | Max breakdown voltage |
| Collector Current (Ic) | 100mA | Max current handling |
| Power Dissipation (Pd) | 1W | Max thermal limit |
| DC Current Gain (hFE) | 220 | Base signal amplification ratio |
| Transition Frequency (fT) | 100MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 300mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 4uA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||