BC856BS Transistor Datasheet & Specifications
PNPSOT-363General Purpose
VCEO
65V
Ic Max
100mA
Pd Max
200mW
Gain
200
Quick Reference
The BC856BS is a PNP bipolar transistor in a SOT-363 package. This datasheet provides complete specifications including 65V breakdown voltage and 100mA continuous collector current. Download the BC856BS datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | FUXINSEMI | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| VCEO | 65V | Breakdown voltage |
| IC Max | 100mA | Collector current |
| Pd Max | 200mW | Power dissipation |
| Gain | 200 | DC current gain |
| Frequency | - | Transition speed |
| VCEsat | - | Saturation voltage |
| Vebo | 100MHz | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| TPMMDT2907A | PNP | SOT-363 | 60V | 600mA | 200mW |
| BC856BDW1T1G-HYX | PNP | SOT-363 | 65V | 100mA | 200mW |
| AD-BC856S | PNP | SOT-363 | 65V | 100mA | 0.2mW |
| BC856S(RANGE:110-475) | PNP | SOT-363 | 65V | 100mA | 200mW |
| BC856DW | PNP | SOT-363 | 65V | 100mA | 200mW |