BC856B Transistor Datasheet & Specifications

PNP BJT | MSKSEMI

PNPSOT-23General Purpose
VCEO
65V
Ic Max
100mA
Pd Max
200mW
Gain
-

Quick Reference

The BC856B is a PNP bipolar transistor in a SOT-23 package. This datasheet provides complete specifications including 65V breakdown voltage and 100mA continuous collector current. Download the BC856B datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMSKSEMIOriginal Manufacturer
PackageSOT-23Physical mounting
VCEO65VBreakdown voltage
IC Max100mACollector current
Pd Max200mWPower dissipation
Gain-DC current gain
Frequency-Transition speed
VCEsat-Saturation voltage
Vebo100MHzEmitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
MMBT2907A-7-FPNPSOT-2360V600mA350mW
BC856ALT1GPNPSOT-2365V100mA225mW
ZXTP2025FTAPNPSOT-2350V5A1.2W
2SA812PNPSOT-2350V100mA300mW
LBC856BLT1GPNPSOT-2365V100mA225mW
MMBT2907APNPSOT-2360V600mA250mW
MMBT2907APNPSOT-2360V600mA250mW
FMMT591TAPNPSOT-2360V1A500mW
MMBT2907ALT1HTSA1PNPSOT-2360V600mA330mW