BC850BWE6327-HXY Transistor Datasheet & Specifications

NPN BJT | HXY MOSFET

NPNSOT-323General Purpose
VCEO
-
Ic Max
45V
Pd Max
100mA
Gain
-55โ„ƒ~+150โ„ƒ

Quick Reference

The BC850BWE6327-HXY is a NPN bipolar transistor in a SOT-323 package. This datasheet provides complete specifications including - breakdown voltage and 45V continuous collector current. Download the BC850BWE6327-HXY datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-323Physical mounting
VCEO-Breakdown voltage
IC Max45VCollector current
Pd Max100mAPower dissipation
Gain-55โ„ƒ~+150โ„ƒDC current gain
Frequency-Transition speed
VCEsat100MHzSaturation voltage
Vebo-Emitter-Base voltage
Temp150mWOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
BC847WNPNSOT-323-45V100mA
2SC4226 R25NPNSOT-323-12V100mA
MMST3904-TPNPNSOT-323-40V200mA
2SC4226 R25-MSNPNSOT-323-12V100mA
BC848BWT106NPNSOT-323-30V100mA
2SC4117-GR.LFNPNSOT-323-120V100mA
2SD2351T106WNPNSOT-323-50V150mA
BC847CWNPNSOT-32345V100mA150mW