BC847QAPNZ Datasheet & Equivalents
NPN+PNP
DFN-6 (1x1)
General Purpose
Nexperia
VCEO
45V
Ic Max
100mA
Pd Max
350mW
hFE Gain
200
Quick Reference
The BC847QAPNZ is a NPN+PNP bipolar junction transistor array in a DFN-6 (1x1) package, manufactured by Nexperia. It supports a breakdown voltage of 45V and continuous collector current of 100mA per channel.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | DFN-6 (1x1) | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Polarity | NPN+PNP | Configuration |
| Collector-Emitter Voltage (VCEO) | 45V | Max breakdown voltage |
| Collector Current (Ic) | 100mA | Max current handling |
| Power Dissipation (Pd) | 350mW | Max thermal limit |
| DC Current Gain (hFE) | 200 | Base signal amplification ratio |
| Transition Frequency (fT) | 100MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 100mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 6V | Max emitter-base breakdown |
| Collector Cutoff Current | 5uA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||